RFM6N45

Semiconductor RFM6N45, RFP6N45, RFP6N50 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17425. September 1998 Features 6A, 450V and 500V rDS(ON) = 1.250Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedence Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFM6 N45, RFP6N4 5, RFP6N5 0) /Subject (6A, 450V and 500V, 1.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN Symbol D Ordering Information PART NUMBER RFM6N45 RFP6N45 RFP6N50 PACKAGE TO-204AA TO-204AA TO-220AB BRAND RFM6N45 RFP6N45 RFP6N50 S G NOTE: When ordering, include the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File N...