RFP10N15

RFP10N15 Data Sheet March 1999 File Number 1445.3 10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09192. Features 10A, 150V rDS(ON) = 0.300Ω Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFP10N15 PACKAGE TO-220AB BRAND RFP10N15 G S NOTE: When ordering, include the entire part number. Packaging TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP10N15 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP10N15 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3)...