RFP12N10L

RFP12N10L Data Sheet July 1999 File Number 1512.3 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09526. Features 12A, 100V rDS(ON) = 0.200Ω Design Optimized for 5V Gate Drives Can be Driven Directly from QMOS, NMOS, TTL Circuits Compatible with Automotive Drive Requirements SOA is Power-Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Ordering Information PART NUMBER RFP12N10L PACKAGE TO-220AB BRAND F12N10L Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (TAB) 6-224 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP12N10L Absolute Maximum Ratings TC = 25oC, Unless Otherw...