RFP12N18

Semiconductor RFM12N18, RFM12N20, RFP12N18, RFP12N20 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09293. BRAND RFM12N18 RFM12N20 RFP12N18 RFP12N20 G September 1998 Features 12A, 180V and 200V rDS(ON) = 0.250Ω Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20) /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN Ordering Information PART NUMBER RFM12N18 RFM12N20 RFP12N18 RFP12N20 PACKAGE TO-204AA TO-204AA TO-220AB TO-220AB Symbol D NOTE: When ordering, use the entire part number. S Packaging JEDEC TO-204AA DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (TAB) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 1461.2 5-1 RFM12N18, RFM12N20, RFP12N18, RFP12N20 Absolute Maximum Ratings TC = 25oC, Unless Ot...