RFP12P08

RFP12P08, RFP12P10 Data Sheet June 1999 File Number 1495.2 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17511. Features 12A, 80V and 100V rDS(ON) = 0.300Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFP12P08 RFP12P10 PACKAGE TO-220AB TO-220AB BRAND RFP12P08 RFP12P10 Symbol D NOTE: When ordering, include the entire part number. G S Packaging TO-220AB SOURCE DRAIN GATE DRAIN (TAB) 4-161 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999. RFP12P08, RFP12P10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP12P08 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20KΩ) (N...