RFP15N05L, RFP15N06L
Data Sheet July 1999 File Number
1558.3
15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power M...
RFP15N05L, RFP15N06L
Data Sheet July 1999 File Number
1558.3
15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA0522.
Features
15A, 50V and 60V rDS(ON) = 0.140Ω Design Optimized for 5V Gate Drives Can be Driven from QMOS, NMOS, TTL Circuits Compatible with Automotive Drive Requirements SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics
Ordering Information
PART NUMBER RFP15N05L RFP15N06L NOTE: PACKAGE TO-220AB TO-220AB BRAND RFP15N05L RFP15N06L
High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
When ordering, use the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (TAB)
SOURCE DRAIN GATE
6-229
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
RFP15N05L, RFP15N06L
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFP15N05L 50 50 15 40 ±10 60 0.48 -55 to 150 300 260 R...