RFP15N08L

RFP15N08L Data Sheet June 1999 File Number 2840.1 15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET The RFP15N08L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control from logic circuit supply voltages. Formerly developmental type TA09804. Features 15A, 80V rDS(ON) = 0.140Ω Design Optimized for 5 Volt Gate Drive Can be Driven Directly from Q-MOS, N-MOS, TTL Circuits SOA is Power Dissipation Limited 175oC Rated Junction Temperature Logic Level Gate High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFP15N08L PACKAGE TO-220AB BRAND RFP15N08L NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 6-234 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP15N08L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP15N08L Drain to Source Breakdown Voltage (Note 1) . . . . ....