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RFP25N06 Dataheets PDF



Part Number RFP25N06
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Power MOSFET
Datasheet RFP25N06 DatasheetRFP25N06 Datasheet (PDF)

RFP25N06, RF1S25N06, RF1S25N06SM Data Sheet January 2002 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated .

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RFP25N06, RF1S25N06, RF1S25N06SM Data Sheet January 2002 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09771. Features • 25A, 60V • rDS(ON) = 0.047Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFP25N06 RF1S25N06 RF1S25N06SM PACKAGE TO-220AB TO-262AA TO-263AB BRAND RFP25N06 F1S25N06 F1S25N06 Symbol D G NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S25N06SM9A. S Packaging JEDEC TO- 220AB SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C RFP25N06, RF1S25N06, RF1S25N06SMS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP25N06, RF1S25N06, RF1S25N06SM 60 60 ±20 25 (Figure 5) (Figure 6) 72 0.48 -55 to 175 300 260 UNITS V V V A Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg W W/oC oC oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250µA, VGS = 0V (Figure 11) VGS = VDS, ID = 250µA (Figure 10) VDS = 60V VGS = 0V TC = 25oC TC = 150oC MIN 60 2 VGS = 0 to 20V VGS = 0 to 10V VGS = 0 to 2V VDD = 48V, ID = 25A, RL = 1.92Ω Ig(REF) = 0.75mA (Figure 13) (Figure 3) TYP 14 30 45 22 975 330 95 MAX 4 1 50 ±100 0.047 60 100 80 45 3 2.083 62 UNITS V V µA µA nA Ω ns ns ns ns ns ns nC nC nC pF pF pF oC/W oC/W Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(10) Qg(TH) CISS COSS CRSS RθJC RθJA VGS = ±20V ID = 25A, VGS = 10V (Figure 9) VDD = 30V, ID = 12.5A RL = 2.4Ω, VGS = 10V RGS = 10Ω (Figure 13) VDS = 25V, VGS = 0V f = 1MHz (Figure 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time SYMBOL VSD trr ISD = 25A ISD = 25A, dISD/dt = 100A/µs TEST CONDITIONS MIN TYP MAX 1.5 125 UNITS V ns ©2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C RFP25N06, RF1S25N06, RF1S25N06SM Typical Performance Curves 1.2 Unless Otherwise Specified 30 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 125 75 100 TC , CASE TEMPERATURE (oC) 150 175 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 175 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs.


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