RFP2N12

Semiconductor RFP2N12, RFP2N15 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09196. BRAND RFP2N12 RFP2N15 September 1998 Features 2A, 120V and 150V rDS(ON) = 1.750Ω Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFP2N 12, RFP2N1 5) /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO220AB) /Creator () /DOCIN FO pdfmark Ordering Information PART NUMBER RFP2N12 RFP2N15 PACKAGE TO-220AB TO-220AB Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEL TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) [ /PageMode CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 2882.1 5-1 RFP2N12, RFP2N15 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP2N12 120 120 2 5 ±20 25 0.2 -55 to 150 300 260 RFP2N15 150 150 2 5 ±20 25 0.2 -55 to 150 300 260 UNITS V V A A V W W/ oC oC oC oC Drain to Source...