RFP2N20L

RFP2N20L Data Sheet July 1999 File Number 2875.2 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET The RFP2N20L N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V - 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09532. Features 2A, 200V rDS(ON) = 3.500Ω Design Optimized for 5V Gate Drives Can be Driven Directly from QMOS, NMOS, TTL Circuits Compatible with Automotive Drive Requirements SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Ordering Information PART NUMBER RFP2N20L PACKAGE TO-220AB BRAND RFP2N20L Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 6-256 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP2N20L Absolute Maximum Ratings TC = 25oC, Unless Ot...