RFP2N20L
Data Sheet July 1999 File Number
2875.2
2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET
The RFP2N20L ...
RFP2N20L
Data Sheet July 1999 File Number
2875.2
2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET
The RFP2N20L N-Channel enhancement mode silicon gate power field effect
transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V - 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09532.
Features
2A, 200V rDS(ON) = 3.500Ω Design Optimized for 5V Gate Drives Can be Driven Directly from QMOS, NMOS, TTL Circuits Compatible with Automotive Drive Requirements SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance
Ordering Information
PART NUMBER RFP2N20L PACKAGE TO-220AB BRAND RFP2N20L
Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
NOTE: When ordering, include the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
6-256
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
RFP2N20L
Absolute Maximum Ratings
TC = 25oC, Unless Ot...