RFM3N45, RFM3N50, RFP3N45, RFP3N50
Semiconductor
Data Sheet
October 1998
File Number 1384.2
3A, 450V and 500V, 3 Ohm...
RFM3N45, RFM3N50, RFP3N45, RFP3N50
Semiconductor
Data Sheet
October 1998
File Number 1384.2
3A, 450V and 500V, 3 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405.
Features
3A, 450V and 500V rDS(ON) = 3Ω Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
[ /Title () /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark
Symbol
D
Ordering Information
PART NUMBER RFM3N45 RFM3N50 RFP3N45 RFP3N50 PACKAGE TO-204AA TO-204AA TO-220AB TO-220AB BRAND RFM3N45 RFM3N50 RFP3N45 RFP3N50
G
S
NOTE: When ordering, use the entire part number.
[ /PageMode /UseOutlines /DOCVIEW pdfmark
Packaging
JEDEC TO-204AA
DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
SOURCE (PIN 2) GATE (PIN 1)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998
RFM3N45, RFM3N50, RFP3N45, RFP3N50
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFM3N45 450 450 3 5 ±20 75 0.6 -55 to 150 300 260
RFM3N50 500 500 3 5 ±20 75 0.6 -55 to 150 300 260
RFP3N45...