RFP40N10

RFG40N10, RFP40N10, RF1S40N10SM Data Sheet July 1999 File Number 2431.3 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits. Formerly developmental type TA9846 Features 40A, 100V rDS(ON) = 0.040Ω UIS Rating Curve SOA is Power Dissipation Limited 175oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFG40N10 RFP40N10 RF1S40N10SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG40N10 RFP40N10 G S F1S40N10 NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, i.e. RF1S40N10SM9A. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE 4-450 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFG40N10, RFP40N10,...