RFP4N05L, RFP4N06L
Data Sheet July 1999 File Number
2876.2
4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOS...
RFP4N05L, RFP4N06L
Data Sheet July 1999 File Number
2876.2
4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs
The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09520.
Features
4A, 50V and 60V rDS(ON) = 0.800Ω Design Optimized for 5V Gate Drives Can be Driven Directly from QMOS, NMOS, TTL Circuits Compatible with Automotive Drive Requirements SOA is Power-Dissipation Limited Nanosecond Switching Speeds
Ordering Information
PART NUMBER RFP4N05L RFP4N06L PACKAGE TO-220AB TO-220AB BRAND RFP4N05L RFP4N06L
Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
NOTE: When ordering, include the entire part number.
Symbol
D
G
S
Packaging
JEDEL TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
6-274
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
RFP4N05L, RFP4N06L
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFP4N05L Drain to Source Vo...