RFP4N05, RFP4N06
June 1999 File Number
2880.2
4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs
These are N-Channel e...
RFP4N05, RFP4N06
June 1999 File Number
2880.2
4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect
transistors designed for applications such as switching
regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09378.
Features
4A, 50V and 60V rDS(ON) = 0.800Ω Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
G
PART NUMBER RFP4N05 RFP4N06
PACKAGE TO-220AB TO-220AB
BRAND RFP4N05 RFP4N06
S
NOTE: When ordering, include the entire part number.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
4-523
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
RFP4N05, RFP4N06
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFP4N05 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . VDGR Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . ...