RFP4N06L

RFP4N05L, RFP4N06L Data Sheet July 1999 File Number 2876.2 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09520. Features 4A, 50V and 60V rDS(ON) = 0.800Ω Design Optimized for 5V Gate Drives Can be Driven Directly from QMOS, NMOS, TTL Circuits Compatible with Automotive Drive Requirements SOA is Power-Dissipation Limited Nanosecond Switching Speeds Ordering Information PART NUMBER RFP4N05L RFP4N06L PACKAGE TO-220AB TO-220AB BRAND RFP4N05L RFP4N06L Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEL TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 6-274 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP4N05L, RFP4N06L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP4N05L Drain to Source Vo...