RFM4N35, RFM4N40, RFP4N35, RFP4N40
Semiconductor
Data Sheet
October 1998
File Number 1491.3
4A, 350V and 400V, 2.000...
RFM4N35, RFM4N40, RFP4N35, RFP4N40
Semiconductor
Data Sheet
October 1998
File Number 1491.3
4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs
Features
4A, 350V and 400V rDS(ON) = 2.000Ω Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
[ [ /Title /Title These are N-channel enhancement-mode silicon-gate (RFM4N () power field effect
transistors designed for applications such 35, as switching
regulators, switching converters, motor drivers, /Subrelay drivers, and drivers for high power bipolar switching RFM4N ject () 40, /Autho
transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated RFP4N3 r () circuits. 5, /KeyRFP4N4 Formerly developmental type TA17404. words 0) () Ordering Information /Subject /CrePART NUMBER PACKAGE BRAND (4A, ator () RFM4N35 TO-204AA RFM4N35 350V /DOCI RFM4N40 TO-204AA RFM4N40 and NFO RFP4N35 TO-220AB RFP4N35 400V, pdfRFP4N40 TO-220AB RFP4N40 2.000 mark NOTE: When ordering, use the entire part number. Ohm, NChannel [ Power /Page- Packaging MOSMode JEDEC TO-204AA FETs) /Use/Author OutDRAIN () lines (FLANGE) /Key/DOCwords VIEW (Harris pdfSemimark conducSOURCE (PIN 2) tor, NGATE (PIN 1) Channel Power MOSFETs, TO204AA, TO220AB) /Creator ()
Symbol
D
G
S
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corpora...