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RFP50N05 Dataheets PDF



Part Number RFP50N05
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel MOSFET
Datasheet RFP50N05 DatasheetRFP50N05 Datasheet (PDF)

RFG50N05, RFP50N05 Data Sheet July 1999 File Number 2873.3 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar tr.

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RFG50N05, RFP50N05 Data Sheet July 1999 File Number 2873.3 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. Formerly developmental type TA09772. Features • 50A, 50V • rDS(ON) = 0.022Ω • UIS Rating Curve (Single Pulse) • 175oC Operating Temperature Symbol D Ordering Information PART NUMBER RFG50N05 RFP50N05 PACKAGE TO-247 TO-220AB BRAND RFG50N05 RFP50N05 G S NOTE: When ordering, include the entire part number. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-462 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFG50N05, RFP50N05 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFG50N05, RFP50N05 50 50 50 120 ±20 132 0.88 Refer to UIS SOA Curve -55 to 175 300 260 UNITS V V A A V W W/ oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Eas Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 0.250µA, VGS = 0V (Figure 9) VDS = VGS, ID = 0.250µA (Figure 8) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC IGSS rDS(ON) t(ON) td(ON) tr td(OFF) tf t(OFF) Qg(tot) Qg(10) Qg(th) RθJC RθJA TO-220 TO-247 VGS = 0-20V VGS = 0-10V VGS = 0-2V VDD - 40V, ID = 50A RL = 0.8Ω, IG(REF) = 1.5mA (Figure 11) VGS = ±20V ID = 50A, VGS = 10V (Figure 7) VDD = 25V, ID ≈ 25A, RL = 1.0Ω, RGS = 6.67Ω, VGS = 10V (Figure 11) MIN 50 2.0 TYP 15 55 60 15 MAX 4.0 1 25 ±100 0.022 100 100 160 80 6 1.14 62 30 UNITS V V A µA nA Ω ns ns ns ns ns ns nC nC nC oC/W oC/W oC/W Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current, Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulsed test: pulse width ≤ 300µs duty cycle ≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. SYMBOL VSD trr ISD = 50A ISD = 50A, dlSD/dt = 100A/µs TEST CONDITIONS MIN TYP MAX 1.5 125 UNITS V ns 4-463 RFG50N05, RFP50N05 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 ID, DRAIN CURRENT (A) Unless Otherwise Specified 60 50 40 30 20 10 0 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 175 25 50 75 125 100 TC, CASE TEMPERATURE (Co) 150 175 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) DC IAS, AVALANCHE CURRENT (A) Tj = MAX RATED TC = 25oC 1000 ID, DRAIN CURRENT (A) If R = 0 tav = (L)(Ias)/(1.3 RATED BVdss - Vdd) If R ≠ 0 tav = (L/R) In[(Ias x R)/(1.3.


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