Document
RFG50N05, RFP50N05
Data Sheet July 1999 File Number
2873.3
50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs
These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. Formerly developmental type TA09772.
Features
• 50A, 50V • rDS(ON) = 0.022Ω • UIS Rating Curve (Single Pulse) • 175oC Operating Temperature
Symbol
D
Ordering Information
PART NUMBER RFG50N05 RFP50N05 PACKAGE TO-247 TO-220AB BRAND RFG50N05 RFP50N05
G
S
NOTE: When ordering, include the entire part number.
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL)
JEDEC TO-220AB
SOURCE DRAIN GATE
DRAIN (FLANGE)
4-462
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
RFG50N05, RFP50N05
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFG50N05, RFP50N05 50 50 50 120 ±20 132 0.88 Refer to UIS SOA Curve -55 to 175 300 260 UNITS V V A A V W W/ oC
oC oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Eas Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 150oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 0.250µA, VGS = 0V (Figure 9) VDS = VGS, ID = 0.250µA (Figure 8) VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC IGSS rDS(ON) t(ON) td(ON) tr td(OFF) tf t(OFF) Qg(tot) Qg(10) Qg(th) RθJC RθJA TO-220 TO-247 VGS = 0-20V VGS = 0-10V VGS = 0-2V VDD - 40V, ID = 50A RL = 0.8Ω, IG(REF) = 1.5mA (Figure 11) VGS = ±20V ID = 50A, VGS = 10V (Figure 7) VDD = 25V, ID ≈ 25A, RL = 1.0Ω, RGS = 6.67Ω, VGS = 10V (Figure 11) MIN 50 2.0 TYP 15 55 60 15 MAX 4.0 1 25 ±100 0.022 100 100 160 80 6 1.14 62 30 UNITS V V A µA nA Ω ns ns ns ns ns ns nC nC nC
oC/W oC/W oC/W
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current, Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulsed test: pulse width ≤ 300µs duty cycle ≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. SYMBOL VSD trr ISD = 50A ISD = 50A, dlSD/dt = 100A/µs TEST CONDITIONS MIN TYP MAX 1.5 125 UNITS V ns
4-463
RFG50N05, RFP50N05 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 ID, DRAIN CURRENT (A)
Unless Otherwise Specified
60 50
40 30 20 10 0
125 50 75 100 TC , CASE TEMPERATURE (oC)
150
175
25
50
75 125 100 TC, CASE TEMPERATURE (Co)
150
175
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
100
10
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) DC
IAS, AVALANCHE CURRENT (A)
Tj = MAX RATED TC = 25oC
1000
ID, DRAIN CURRENT (A)
If R = 0 tav = (L)(Ias)/(1.3 RATED BVdss - Vdd) If R ≠ 0 tav = (L/R) In[(Ias x R)/(1.3.