RFP50N06 MOSFETs Datasheet

RFP50N06 Datasheet PDF, Equivalent


Part Number

RFP50N06

Description

50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs

Manufacture

Intersil Corporation

Total Page 8 Pages
PDF Download
Download RFP50N06 Datasheet PDF


RFP50N06
RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet
July 1999 File Number 3575.4
50A, 60V, 0.022 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49018.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N06
TO-247
RFG50N06
RFP50N06
TO-220AB
RFP50N06
RF1S50N06SM
TO-263AB
F1S50N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S50N06SM9A.
Packaging
JEDEC STYLE TO-247
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
Features
• 50A, 60V
• rDS(ON) = 0.022
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
Symbol
D
G
S
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-467
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

RFP50N06
RFG50N06, RFP50N06, RF1S50N06SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RFG50N06, RFP50N06
RF1S50N06SM
60
60
±20
50
(Figure 5)
(Figure 6, 14, 15)
131
0.877
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(10)
Qg(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V (Figure 11)
VGS = VDS, ID = 250µA (Figure 10)
VDS = 60V,
VGS = 0V
TC = 25oC
TC = 150oC
VGS = ±20V
ID = 50A, VGS = 10V (Figures 9)
VDD = 30V, ID = 50A
RL = 0.6, VGS = 10V
RGS = 3.6
(Figure 13)
VGS = 0 to 20V
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 48V, ID = 50A,
RL = 0.96
Ig(REF) = 1.45mA
(Figure 13)
VDS = 25V, VGS = 0V
f = 1MHz
(Figure 12)
(Figure 3)
TO-247
TO-220, TO-263
MIN
60
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
12
55
37
13
-
125
67
3.7
2020
600
200
-
-
-
MAX
-
4
1
50
±100
0.022
95
-
-
-
-
75
150
80
4.5
-
-
-
1.14
30
62
UNITS
V
V
µA
µA
nA
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
oC/W
oC/W
oC/W
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
VSD
trr
TEST CONDITIONS
ISD = 50A
ISD = 50A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
-
- 1.5
V
- - 125 ns
4-468


Features RFG50N06, RFP50N06, RF1S50N06SM Data She et July 1999 File Number 3575.4 50A, 6 0V, 0.022 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manuf actured using the MegaFET process. This process, which uses feature sizes appr oaching those of LSI integrated circuit s gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applicati ons such as switching regulators, switc hing converters, motor drivers, and rel ay drivers. These transistors can be op erated directly from integrated circuit s. Formerly developmental type TA49018. Features • 50A, 60V • rDS(ON) = 0 .022Ω • Temperature Compensating PS PICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 17 5oC Operating Temperature Symbol D Or dering Information PART NUMBER RFG50N06 RFP50N06 RF1S50N06SM PACKAGE TO-247 TO -220AB TO-263AB BRAND RFG50N06 RFP50N06 F1S50N06 S G NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in.
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