RFP6P10

RFP6P08, RFP6P10 Data Sheet October 1999 File Number 1490.2 -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors. Formerly developmental type TA09046. Features -6A, -80V and -100V rDS(ON) = 0.600Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device BRAND Ordering Information PART NUMBER RFP6P08 RFP6P10 PACKAGE TO-220AB TO-220AB RFP6P08 RFP6P10 Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP6P08, RFP6P10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP6P08 80 80 6 20 ±20 60 0.48 -55 to 150 300 260 RFP6P10 100 100 6 20 ±20 60 0.48 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . ....