RFP70N03

RFP70N03, RF1S70N03SM Data Sheet July 1999 File Number 3404.4 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49025. Features 70A, 30V rDS(ON) = 0.010Ω Temperature Compensating PSPICE® Model Peak Current vs Pulse Width Curve UIS Rating Curve (Single Pulse) 175oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFP70N03 RF1S70N03SM PACKAGE TO-220AB TO-263AB BRAND RFP70N03 F1S70N03 Symbol D NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g., RF1S70N03SM9A G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE GATE SOURCE JEDEC TO-263AB DRAIN (FLANGE) DRAIN (FLANGE) 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP70N03, RF1S70N03SM Absolute Maximum...