Document
Semiconductor
RFM7N35, RFM7N40, RFP7N35, RFP7N40
7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17424.
July 1998
Features
• 7A, 350V and 400V • rDS(ON) = 0.75Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER RFM7N35 RFM7N40 RFP7N35 RFP7N40 PACKAGE TO-204AA TO-204AA TO-220AB TO-220AB BRAND RFM7N35 RFM7N40 RFP7N35 RFP7N40
S G
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AA
DRAIN (FLANGE) DRAIN (TAB)
JEDEC TO-220AB
SOURCE DRAIN GATE
SOURCE (PIN 2) GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
© Harris Corporation 1998
File Number
1536.2
5-1
RFM7N35, RFM7N40, RFP7N35, RFP7N40
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified RFM7N35 350 350 7 15 ±20 100 0.8 -55 to 150 300 260 RFM7N40 400 400 7 15 ±20 100 0.8 -55 to 150 300 260 RFP7N35 350 350 7 15 ±20 75 0.6 -55 to 150 300 260 RFP7N40 400 400 7 15 ±20 75 0.6 -55 to 150 300 260 UNITS V V A A V W W/oC oC
oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor (Above 25oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. TJ = 25oC to 125oC.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250µA, VGS = 0V 350 400 VGS(TH) IDSS VGS = VDS , ID = 250µA (Figure 8) VDS = Rated BVDSS , TC = 25oC VDS = 0.8 x Rated BVDSS , TC = 125oC 2 VDS = 25V, VGS = 0V, f = 1MHz (Figure 9) RFM7N35, RFM7N40 RFP7N35, RFP7N40 16 54 170 62 4 1 25 ±100 0.75 5.25 45 75 250 100 1600 300 200 1.25 1.67 V V V µA µA nA Ω V ns ns ns ns pF pF pF
oC/W oC/W
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage RFM7N35, RFP7N35 RFM7N40, RFP7N40 Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction to Case
IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RθJC
VGS = ±20V, VDS = 0V ID = 7A, VGS = 10V (Figures 6, 7) ID = 7A, VGS = 10V VDS = 200V, ID ≈ 3.5A, RG = 50Ω , RL = 56Ω , VGS = 10V (Figures 10, 11, 12)
Source to Drain Diode Specifications
PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: 2. Pulse Test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr TEST CONDITIONS ISD = 7A ISD = 7A, dISD/dt = 100A/µs MIN TYP 870 MAX 1.4 UNITS V ns
5-2
RFM7N35, RFM7N40, RFP7N35, RFP7N40 Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A)
Unless Otherwise Specified
8 7 6 RFM7N40 5 RFP7N40 4 3 2 1 0 25
0.8 0.6 0.4 0.2 0
0
50
100
150
50
75
100
125
150
TC , CASE TEMPERATURE (oC)
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE
100
TC = 25oC TJ = MAX RATED ID , DRAIN CURRENT (A) ID (MAX) CONTINUOUS
DC OP ER
16
PULSE DURATION = 80µs TC = 25oC VGS = 6V
ID , DRAIN CURRENT (A)
12 VGS = 7V TO 20V 8
10
1
OPERATION IN THIS AREA IS LIMITED BY rDS(ON)
AT I.