RFD8P06E, RFD8P06ESM, RFP8P06E
Data Sheet July 1999 File Number
3937.5
8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs
Thes...
RFD8P06E, RFD8P06ESM, RFP8P06E
Data Sheet July 1999 File Number
3937.5
8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs
These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching
regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar
transistors. These
transistors can be operated directly from integrated circuits. The RFD8P06E, RFD8P06ESM and RFP8P06E incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD. Formerly developmental type TA49044.
Features
8A, 60V rDS(ON) = 0.300Ω Temperature Compensating PSPICE® Model 2kV ESD Protected Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER RFP8P06E RFD8P06ESM RFD8P06E PACKAGE TO-220AB TO-252AA TO-251AA BRAND RFP8P06E D8P06E D8P06E
S G
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. RFD8P06ESM9A.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
JEDEC TO-251AA
SOURCE DRAIN GATE
DRAIN (FLANGE)
JEDEC TO-252AA
DRAIN (FLANGE)
GATE SOURCE
4-117
CAUTION: These devices are sensi...