RFT1P06E
Data Sheet August 1999 File Number
4495.1
1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET
These produc...
RFT1P06E
Data Sheet August 1999 File Number
4495.1
1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET
These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits. Formerly developmental type TA49044.
Features
1.4A, 60V rDS(ON) = 0.285Ω 2kV ESD Protected Temperature Compensating PSPICE® Model SPICE Thermal Model Peak Current vs Pulse Width Curve UIS Rating Curve 150oC Operating Temperature Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER RFT1P06E PACKAGE SOT-223 BRAND R1P06E
Symbol
D
NOTE: RFT1P06E is available only in tape and reel.
G
S
Packaging
SOT-223
DRAIN (FLANGE)
SOURCE DRAIN GATE
4-171
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999.
RFT1P06E
Absolute Maximum Ratings
TA = 25oC, Unless Otherwise Specified RFT1P06E -60 -60 ±20V 1.4 Figure 5 Figures 6, 14, 15 1.1 9.09 -55 to 150 300 260 UNITS V V V A
Drain...