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RFT2P03L

Intersil Corporation

2.1A/ 30V/ 0.150 Ohm/ P-Channel Logic Level/ Power MOSFET

RFT2P03L Data Sheet July 1999 File Number 4574.2 2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET This product...


Intersil Corporation

RFT2P03L

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Description
RFT2P03L Data Sheet July 1999 File Number 4574.2 2.1A, 30V, 0.150 Ohm, P-Channel Logic Level, Power MOSFET This product is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. This transistor can be operated directly from integrated circuits. Formerly developmental type TA49222. Features 2.1A, 30V rDS(ON) = 0.150Ω Temperature Compensating PSPICE® Model Thermal Impedance SPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFT2P03L PACKAGE SOT-223 2P03L BRAND Symbol D NOTE: RFT2P03L is available only in tape and reel. Use the entire part number and add the suffix T. G S Packaging SOT-223 DRAIN (FLANGE) SOURCE DRAIN GATE 7-7-19 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFT2P03L Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified -30 -30 ±20V 2.1 Figure 5 Figures 6, 14, 15 1.1 0.009 -55 to 150 300 260 UNITS V V V A Drain to Sour...




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