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RG2

EIC discrete Semiconductors

ULTRA FAST RECOVERY RECTIFIER DIODES

RG2 - RG2Z PRV : 200 - 400 Volts Io : 1.2 Amperes FEATURES : * * * * * * High current capability High surge current capa...


EIC discrete Semiconductors

RG2

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Description
RG2 - RG2Z PRV : 200 - 400 Volts Io : 1.2 Amperes FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency ULTRA FAST RECOVERY RECTIFIER DIODES D2 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. 0.284 (7.21) 0.268 (6.81) MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram Rating at 25 ° C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS TYPE NUMBER Maximum Peak Reverse Voltage Maximum Peak Reverse Surge Voltage Maximum Average Forward Current Ta = 60 ° C Maximum Peak Forward Surge Current (50 Hz, Half-cycle, Sine wave, Single Shot) Maximum Forward Voltage at IF = 1.5A Maximum Reverse Current at VR = VRM Ta = 25 ° C Maximum Reverse Current at VR = VRM Ta = 100 ° C Maximum Reverse Recovery Time ( Note 1 ) Junction Temperature Range Storage Temperature Range SYMBOL VRM VRSM IF(AV) RG2Z 200 200 1.2 RG2 400 400 UNITS Volts Volts Amps. IFSM VF IR IR(H) Trr TJ TSTG 50 1.5 0.5 2.5 100 - 40 to + 150 - 40 to + 150 Amps. Volts mA mA ns °C °C ...




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