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Preliminary Data Sheet PD - 9.1074
IRGBC40M
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz)
G E C
Short Circuit Rated Fast IGBT
VCES = 600V VCE(sat) ≤ 3.0V
@VGE = 15V, IC = 24A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
600 40 24 80 80 10 ±20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m)
Units
V A
µs V mJ W
°C
Thermal Resistance
Parameter
RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
— — — —
Typ.
— 0.50 — 2 (0.07)
Max.
0.77 — 80 —
Units
°C/W g (oz)
Revision 1
C-313
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IRGBC40M
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS
∆V(BR)CES/∆TJ
VCE(on)
VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES
Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, IC = 250µA 20 — — V VGE = 0V, IC = 1.0A — 0.70 — V/°C VGE = 0V, IC = 1.0mA — 2.0 3.0 IC = 24A VGE = 15V — 2.6 — V IC = 40A — 2.4 — IC = 24A, T J = 150°C Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA 9.2 12 — S VCE = 100V, IC = 24A Forward Transconductance Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 1000 VGE = 0V, VCE = 600V, T J = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. VCC=80%(VCES), VGE=20V, L=10µH, RG= 10Ω Min. — — — — — — — — — — 10 — — — — — — — — — Typ. Max. Units Conditions 59 80 IC = 24A 8.6 10 nC VCC = 400V 25 42 VGE = 15V 26 — TJ = 25°C 37 — ns IC = 24A, VCC = 480V 240 410 VGE = 15V, RG = 10Ω 230 420 Energy losses include "tail" 0.75 — 1.65 — mJ 2.4 3.6 — — µs VCC = 360V, T J = 125°C VGE = 15V, RG = 10Ω, VCPK < 500V 28 — TJ = 150°C, 37 — ns IC = 24A, VCC = 480V 380 — VGE = 15V, RG = 10Ω 460 — Energy losses include "tail" 4.5 — mJ 7.5 — nH Measured 5mm from package 1500 — VGE = 0V 190 — pF VCC = 30V 20 — ƒ = 1.0MHz Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum junction temperature. Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Refer to Section D for the following: Package Outline 1 - JEDEC Outline TO-220AB
C-314
Section D - page D-12
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