Operational Amplifier. RH27C Datasheet


RH27C Amplifier. Datasheet pdf. Equivalent


RH27C


Precision Operational Amplifier
RH27C Precision Operational Amplifier

DESCRIPTIO

ABSOLUTE

AXI U

RATI GS

The RH27C combines very low noise with excellent precision and high speed specifications. The low 1/f noise corner frequency of 2.7Hz combined with 3.5nV√Hz 10Hz noise and low offset voltage make the RH27C an excellent choice for low frequency military instrumentation applications. The wafer lots are processed to LTC’s in-house Class S flow to yield circuits usable in stringent military applications. For complete electrical specifications and performance curves see the OP-27/OP-37 data sheet.

Supply Voltage ..................................................... ± 22V Internal Power Dissipation ................................ 500mW Input Voltage ........................... Equal to Supply Voltage Output Short-Circuit Duration ......................... Indefinite Differential Input Current (Note 8) ..................... ± 25mA Operating Temperature Range ............. – 55°C to 125°C Junction Temperature Range ............... – 55°C to 150°C Storage Temperature Range ................ – 65°C to 150°C Lead Temperature (Soldering, 10 sec)................. 300°C
, LTC and LT are registered trademarks of Linear Technology Corporation.

BUR -I CIRCUIT
10k 20V 20V 2 200Ω 3 10k

PACKAGE/ORDER I FOR ATIO
TOP VIEW VOS TRIM 8 VOS TRIM 1 –IN 2
2
TOP VIEW

7
– +

V+ 6 OUT

VOS TRIM 1 –IN 2 +IN 3 V
– – +

8 7 6 5 J8 ...



RH27C
RH27C
Precision Operational Amplifier
DESCRIPTIO
The RH27C combines very low noise with excellent preci-
sion and high speed specifications. The low 1/f noise
corner frequency of 2.7Hz combined with 3.5nVHz 10Hz
noise and low offset voltage make the RH27C an excellent
choice for low frequency military instrumentation applica-
tions. The wafer lots are processed to LTC’s in-house
Class S flow to yield circuits usable in stringent military
applications.
For complete electrical specifications and performance
curves see the OP-27/OP-37 data sheet.
ABSOLUTE AXI U RATI GS
Supply Voltage ..................................................... ±22V
Internal Power Dissipation ................................ 500mW
Input Voltage ........................... Equal to Supply Voltage
Output Short-Circuit Duration ......................... Indefinite
Differential Input Current (Note 8) ..................... ±25mA
Operating Temperature Range ............. – 55°C to 125°C
Junction Temperature Range ............... – 55°C to 150°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec)................. 300°C
, LTC and LT are registered trademarks of Linear Technology Corporation.
BUR -I CIRCUIT
PACKAGE/ORDER I FOR ATIO
10k
20V
27
200
3+
10k
4
– 20V
6 OR
20V
27
8
3+
4
– 20V
TOP VIEW
VOS TRIM
VOS TRIM 1
8
7 V+
–IN 2
+
6 OUT
+IN 3
5 NC
4
V(CASE)
H PACKAGE
8-LEAD TO-5 METAL CAN
TOP VIEW
VOS TRIM 1
–IN 2
+IN 3
V4
+
8 VOS TRIM
7 V+
6 OUT
5 NC
J8 PACKAGE
8-LEAD CERDIP
TOP VIEW
NC 1
VOS TRIM 2
–IN 3
+IN 4
V5
+
10 NC
9 VOS TRIM
8 V+
7 OUT
6 NC
W PACKAGE
10-LEAD CERPAC
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 9)
SYMBOL PARAMETER
VOS
VOS
Temp
Input Offset Voltage
Average Offset Drift
VOS Long-Term Input Offset
Time Voltage Stability
IOS Input Offset Current
IB Input Bias Current
CONDITIONS
NOTES
1
4, 7
TA = 25°C
MIN TYP MAX
100
SUB-
GROUP
4
– 55°C TA 125°C
MIN TYP MAX
300
1.8
SUB-
GROUP
2, 3
UNITS
µV
µV/°C
2, 4 2
µV/Month
75 1
±80 1
135
±150
2, 3
2, 3
nA
nA
1

RH27C
RH27C
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation) (Note 9)
SYMBOL PARAMETER
CONDITIONS
TA = 25°C
NOTES MIN TYP MAX
en Input Noise Voltage
0.1Hz to 10Hz
Input Noise Voltage Density
fO = 10Hz
fO = 30Hz
fO = 1000Hz
in Input Noise Current Density fO = 1000Hz
Input Resistance
Common Mode
4, 5
3
4
4
4, 6
0.25
8.0
5.6
4.5
0.6
2
Input Voltage Range
4 ±11
CMRR Common Mode
Rejection Ratio
VCM = ±11V
VCM = ±10V
100
PSRR Power Supply
Rejection Ratio
VS = ±4V to ±18V
VS = ±4.5V to ±18V
94
AVOL Large-Signal Voltage Gain RL 2k, VO = ±10V
700
RL 600, VO = ±1V 4 200
VS = ±4V
VOUT Maximum Output
Voltage Swing
RL = 2k
RL = 600
±11.5
±10.0
SR Slew Rate
RL = 2k
1.7
GBW Gain-Bandwidth Product
fO = 100kHz
45
ZO Open-Loop Output Resistance VO = 0, IO = 0
70
PD Power Dissipation
170
SUB- – 55°C TA 125°C
GROUP MIN TYP MAX
±10.2
1
94
1
86
4 300
4 ±10.5
4
7
1
SUB-
GROUP
2, 3
2, 3
5, 6
5, 6
UNITS
µVP-P
nV/Hz
nV/Hz
nV/Hz
pV/Hz
G
V
dB
dB
dB
dB
V/mV
V/mV
V
V
V/µs
MHz
mW
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) (Note 10)
SYMBOL PARAMETER
CONDITIONS
VOS Input Offset Voltage
IOS Input Offset Current
IB Input Bias Current
Input Resistance
Common Mode
Input Voltage Range
CMRR Common Mode
Rejection Ratio
VCM = ±11V
PSRR Power Supply
Rejection Ratio
VS = ±4V to ±18V
AVOL Large-Signal Voltage Gain RL 2k, VO = ±10V
VOUT Maximum Output
Voltage Swing
RL 10k
RL 600
ZO Open-Loop Output Resistance VO = 0, IO = 0
PD Power Dissipation
NOTES
1
10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si)
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
100 130 180 280
400 µV
75 75 90 120 180 nA
±80
±80
±125
±200
±400 nA
2 (Typ)
2 (Typ)
2 (Typ)
2 (Typ)
2 (Typ)
G
4 ±11 ±11 ±11 ±11 ±11
100 100
97
94
90
V
dB
94 94 92 90 86
dB
700 700 700 700 400
±11.5
±10.0
±11.5
±10.0
±11.5
±10.0
±11.5
±10.0
±11.5
±10.0
70 (Typ) 70 (Typ) 70 (Typ) 70 (Typ) 70 (Typ)
170 170 170 170 170
V/mV
V
V
mW
2




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)