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RK36

EIC discrete Semiconductors

SCHOTTKY BARRIER RECTIFIER DIODES

RK33 - RK39 PRV : 30 - 90 Volts IO : 2.0 - 2.5 Amperes FEATURES : * High current capability * High surge current capabil...


EIC discrete Semiconductors

RK36

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RK33 - RK39 PRV : 30 - 90 Volts IO : 2.0 - 2.5 Amperes FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low cost * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : D2A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.645 gram SCHOTTKY BARRIER RECTIFIER DIODES DO-15 0.142 (3.6) 0.102 (2.6) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Recurrent Peak Reverse Voltage Maximum DC Blocking Voltage Maximum Average Forward Current TL = 75 C Maximum Peak Forward Surge Current, 8.3ms single half sine wave Superimposed on rated load (JEDEC Method) TL = 75C Maximum Forward Voltage at Forward current Maximum Reverse Current at VRM Ta = 25 C Maximum Reverse Current at VRM Ta = 100 C Junction Temperature Range Storage Temperature Range SYMBOL VRRM VDC IF(AV) RK33 RK34 30 40 30 40 2.5 RK36 RK39 60 90 60 90 2.0 UNIT V V A IFSM 50 40 50 A VF IF IR IR(H) TJ TSTG 0.55 0.62 0.81 V 2.5 2.0 A 5.0 2.0 3.0 m...




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