RDN100N20

RDN100N20 Transistors Switching (200V, 10A) RDN100N20 !Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. !External dimensions (Unit : mm) TO-220FN +0.3 10.0 − 0.1 0.3 4.5 + −0.1 3.2±0.2 2.8 −0.1 +0.2 0.4 15.0 + −0.2 12.0±0.2 !Application Switching 5.0±0.2 8.0±0.2 1.2 1.3 14.0±0.5 0.8 !Structure Silicon N-channel MOS FET (1) Gate (2) Drain (3) Source 2.54±0.5 2.54±0.5 0.75 −0.05 +0.1 2.6±0.5 (1) (2) (3) !Absolute maximum ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IDR IDRP ∗1 IAS ∗2 EAS ∗2 PD Tch Tstg Limits 200 ±30 10 40 10 40 10 120 35 150 −55 to +150 Unit V V A A A A A mJ W °C °C !Equivalent circuit Drain Gate Avalanche Current Avalanche Energy Total Power Dissipation (TC=25°C) Channel Temperature Storage Temperature ∗Gate Protection Diode Source ∗1 Pw ≤ 10µs, Duty cycle ≤ 1% ∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. 1/3 RDN100N20 Transistors !Electrical characteristics (Ta=25°C) Parameter Gate-Source Leakage Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Tran...