RF071M2S

RF071M2S Diodes Fast recovery diode RF071M2S zApplications High frequency rectification zExternal dimensions (Unit : mm) 0.80 + − 0.1 1.6 + − 0.1 zFeatures 1) Small power mold type (PMDS) 2) Ultra low VF 3) Very fast recovery 4) Low switching loss CATHODE MARK 2.6 + − 0.1 0.9 + − 0.1 3.5 + − 0.2 65 ROHM : PMDU 0.1 0.1+ − 0.05 zConstruction Silicon epitaxial planar zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Forward voltage (DC) Average rectified forward current Forward peak surge current (60Hz . 1cyc.) Junction temperature Storage temperature ∗ Mounting on glass epoxi board Symbol VRM VR IF ∗ IO ∗ IFSM Tj Tstg Limits 200 200 1.0 0.7 15 150 −55 to +150 Unit V V A A A °C °C zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. − − − Typ. 0.790 10n ns Max. 0.850 10µ 25 Unit V A ns IF=0.7A VR=200V IF=0.5A, IR=1.0A, Irr=0.25 IR Conditions + Note) ESD sensitive product handing required. 1/2 RF071M2S Diodes zElectrical characteristic curves (Ta=25°C) AVERAGE RECTIFIED CURRENT : IO (A) 1000 10000 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 D=1/2 Sin(θ=180) DC IO 0A 0V VR t FORWARD CURRENT : IF (mA) REVERSE CURRENT : IR (nA) 125°C 1000 75°C T 100 D=t / T VR=200V Tj=150°C 100 125°C 10 25°C 10 75°C 25°C −25°C 1 −25°C 1 0 0.2 0.4 0.6 0.8 1 0.1 0 50 100 150 200 FORWARD VOLTAGE : VF (V) REVERSE...