RF1K49157

S E M I C O N D U C T O R RF1K49157 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET™ Enhancement Mode Power MOSFET Description The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This device can be operated directly from integrated circuits. Formerly developmental type TA49157. January 1997 Features 6.3A, 30V rDS(ON) = 0.030Ω Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve Ordering Information PART NUMBER RF1K49157 PACKAGE MS-012AA BRAND RF1K49157 Symbol NOTE: When ordering, use the entire part number. For ordering in tape and reel, add the suffix 96 to the part number, i.e., RF1K4915796. NC (1) DRAIN (8) SOURCE (2) DRAIN (7) SOURCE (3) DRAIN (6) GATE (4) DRAIN (5) Packaging JEDEC MS-012AA BRANDING DASH 5 1 2 3 4 LittleFET™ is a trademerk of Harris Corporation CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 4012.4 5-64 RF1K49157 Absolute Maximum Ratings TA = 25oC Unless Otherwise Specified RF1K49157 30 30 ±20 6.3 Refer to Peak Current Cu...