RF1S22N10SM

RFP22N10, RF1S22N10SM Data Sheet January 2002 File Number 2385.3 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA9845. Features 22A, 100V rDS(ON) = 0.080Ω UIS SOA Rating Curve (Single Pulse) SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance 175oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFP22N10 RF1S22N10SM PACKAGE TO-220AB TO-263AB BRAND RFP22N10 F1S22N10 Symbol D NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S22N10SM9A. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation RFP22N10, RF1S22N10SM Rev. B RFP22N10, RF1S22N10SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP22N10, RF1S22N10SMS Drain to Source Voltage (Note 1) . . . . . . . . . . ....