RF1S25N06SM

RFP25N06, RF1S25N06, RF1S25N06SM Data Sheet January 2002 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09771. Features 25A, 60V rDS(ON) = 0.047Ω Temperature Compensating PSPICE® Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFP25N06 RF1S25N06 RF1S25N06SM PACKAGE TO-220AB TO-262AA TO-263AB BRAND RFP25N06 F1S25N06 F1S25N06 Symbol D G NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S25N06SM9A. S Packaging JEDEC TO- 220AB SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C RFP25N06, RF1S25N06, RF1S25N06SMS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP25N06, RF1S25N06, RF1S25N06SM 60 60 ±20 25 (...