RF1S30N06LE

S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Packages JEDEC TO-220AB SOURCE DRAIN GATE July 1995 Features 30A, 60V rDS(ON) = 0.047Ω 2kV ESD Protected Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve DRAIN (FLANGE) JEDEC TO-262AA Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. These transistors incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD. PACKAGE AVAILABILITY PART NUMBER RFP30N06LE RF1S30N06LE RF1S30N06LESM PACKAGE TO-220AB TO-262AA TO-263AB BRAND F30N06LE 1S30N06L 1S30N06L G DRAIN (FLANGE) A SOURCE DRAIN GATE JEDEC TO-263AB M A A DRAIN (FLANGE) GATE SOURCE Symbol D NOTE: When ordering use the entire part number. Add suffix, 9A, to obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A. Formerly developmental type TA49027. S Absolute Maximum Ratings TC = +25oC RFP30N06LE, RF1S30N06LE, RF1S30N06LESM UNITS V V V A Drain Source...