RFG30P06, RFP30P06, RF1S30P06SM
Data Sheet July 1999 File Number
2437.3
30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs
Th...
RFG30P06, RFP30P06, RF1S30P06SM
Data Sheet July 1999 File Number
2437.3
30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs
These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits. Formerly developmental type TA09834.
Features
30A, 60V rDS(ON) = 0.065Ω Temperature Compensating PSPICE® Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER RFG30P06 RFP30P06 RF1S30P06SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG30P06 RFP30P06
Symbol
D
G
F1S30P06
S
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. RF1S30P06SM9A.
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE DRAIN GATE
JEDEC TO-263AB
DRAIN (FLANGE) GATE SOURCE
4-133
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE® is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | C...