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RF1S45N02L

Intersil Corporation

45A/ 20V/ 0.022 Ohm/ N-Channel Logic Level Power MOSFETs

RFP45N02L, RF1S45N02L, RF1S45N02LSM May 1997 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs Description The R...


Intersil Corporation

RF1S45N02L

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Description
RFP45N02L, RF1S45N02L, RF1S45N02LSM May 1997 45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs Description The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49243. Features 45A, 20V rDS(ON) = 0.022Ω Temperature Compensating PSPICE Model Can be Driven Directly from CMOS, NMOS, and TTL Circuits Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Ordering Information PART NUMBER RFP45N02L RF1S45N02L RF1S45N02LSM PACKAGE TO-220AB TO-262AA TO-263AB BRAND FP45N02L F45N02L Symbol D G F45N02L S NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S45N02LSM9A. Packaging JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-262AA SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) A JEDEC TO-263AB M A A DRAIN (FLANGE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 File Number 4342 1 RFP...




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