RFP45N02L, RF1S45N02L, RF1S45N02LSM
May 1997
45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs
Description
The R...
RFP45N02L, RF1S45N02L, RF1S45N02LSM
May 1997
45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs
Description
The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching
regulators, switching converters, motor drivers and relay drivers. These
transistors can be operated directly from integrated circuits. Formerly developmental type TA49243.
Features
45A, 20V rDS(ON) = 0.022Ω Temperature Compensating PSPICE Model Can be Driven Directly from CMOS, NMOS, and TTL Circuits Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature
Ordering Information
PART NUMBER RFP45N02L RF1S45N02L RF1S45N02LSM PACKAGE TO-220AB TO-262AA TO-263AB BRAND FP45N02L F45N02L
Symbol
D
G
F45N02L
S
NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S45N02LSM9A.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
JEDEC TO-262AA
SOURCE DRAIN GATE
DRAIN (FLANGE)
DRAIN (FLANGE)
A
JEDEC TO-263AB
M
A
A
DRAIN (FLANGE) GATE SOURCE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
File Number
4342
1
RFP...