Semiconductor
RFP45N03L, RF1S45N03L, RF1S45N03LSM
45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
Description...
Semiconductor
RFP45N03L, RF1S45N03L, RF1S45N03LSM
45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
Description
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching
regulators, switching converters, motor drivers and relay drivers. These
transistors can be operated directly from integrated circuits. Formerly developmental type TA49030.
September 1998
Features
45A, 30V rDS(ON) = 0.022Ω Temperature Compensating PSPICE Model Can be Driven Directly from CMOS, NMOS, and TTL Circuits Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
[ /Title (RFP45 N03L, RF1S45 N03L, RF1S45 N03LS M) /Subject (45A, 30V, 0.022 Ohm,
Symbol
D
Ordering Information
PART NUMBER RFP45N03L RF1S45N03L RF1S45N03LSM PACKAGE TO-220AB TO-262AA TO-263AB BRAND FP45N03L F45N03L F45N03L
S G
NOTE: When ordering, use the entire part number. Add the suffix 9A, to obtain the TO-263AB variant in tape and reel, e.g., RF1S45N03LSM9A.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE)
JEDEC TO-262AA
SOURCE DRAIN GATE
JEDEC TO-263AB
DRAIN (FLANGE) GATE SOURCE
CAUTION: These devices are sensitive to electrostatic discharge....