RF1S45N06SM

S E M I C O N D U C T O R RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Packages JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) December 1995 Features 45A, 60V rDS(ON) = 0.028Ω Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve +175oC Operating Temperature Description The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY PART NUMBER RFG45N06 RFP45N06 RF1S45N06 RF1S45N06SM JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) PACKAGE TO-247 TO-220AB TO-262AA TO-263AB BRAND RFG45N06 RFP45N06 F1S45N06 F1S45N06 DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, i.e. RF1S45N06SM9A. Formerly developmental type TA49028. JEDEC TO-263AB M A Symbol G D A A DRAIN (FLANGE) GATE SOURCE S Absolute Maximum Ratings TC = +25oC RFG45N06, RFP45N06 RF1S45N06, RF1S45N06SM ...