RF1S4N100SM

RFP4N100, RF1S4N100SM Data Sheet August 1999 File Number 2457.4 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from an integrated circuit. Formerly developmental type TA09850. Features 4.3A, 1000V rDS(ON) = 3.500Ω UIS Rating Curve (Single Pulse) -55oC to 150oC Operating Temperature Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFP4N100 RF1S4N100SM PACKAGE TO-220AB TO-263AB BRAND RFP4N100 F1S4N100 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE JEDEC TO-263AB DRAIN (FLANGE) 4-528 CAUTION: These devices are sensitive to electrostatic discharge; follow properS ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFP4N100, RF1S4N100SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP4N100, RF1S4N100SM Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ)...