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RF1S50N06SM

Fairchild Semiconductor

50A/ 60V/ 0.022 Ohm/ N-Channel Power MOSFETs

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs These N-Channel po...


Fairchild Semiconductor

RF1S50N06SM

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RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49018. Features 50A, 60V rDS(ON) = 0.022Ω Temperature Compensating PSPICE® Model Peak Current vs Pulse Width Curve UIS Rating Curve 175oC Operating Temperature Symbol D Ordering Information PART NUMBER RFG50N06 RFP50N06 RF1S50N06SM PACKAGE TO-247 TO-220AB TO-263AB BRAND RFG50N06 RFP50N06 F1S50N06 S G NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, i.e. RF1S50N06SM9A. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE JEDEC TO-263AB GATE SOURCE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation RFG50N06, RFP50N06, RF1S50N06SM Rev. B RFG50N06, RFP50N06, RF1S50N06SM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFG50N06, RFP50N06 RF1S50N06SM 60 60 ±20 50 (Figure 5) (Figure 6) 131 0.877 -55 to 175 300 260 UNITS V V V A Drain to Source Voltage ...




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