RF1S60P03SM

S E M I C O N D U C T O R RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Packages JEDEC STYLE TO-247 SOURCE DRAIN GATE December 1995 Features 60A, 30V rDS(ON) = 0.027Ω Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve +175oC Operating Temperature DRAIN (BOTTOM SIDE METAL) Description The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY PART NUMBER RFG60P03 RFP60P03 RF1S60P03 RF1S60P03SM PACKAGE TO-247 TO-220AB TO-262AA TO-263AB JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) BRAND RFG60P03 RFP60P03 F1S60P03 F1S60P03 DRAIN (FLANGE) A JEDEC TO-262AA SOURCE DRAIN GATE NOTE: When ordering use the entire part number. Formerly developmental type TA49045. Symbol D JEDEC TO-263AB M A A G GATE SOURCE S DRAIN (FLANGE) Absolute Maximum Ratings TC = +25oC RFG60P03, RFP60P03, RF1S60P03, RFS60P03SM -30 -30 ±20 60 Refer to Peak Current Curve Refer to UIS Curve 176 1.17 -55 to +175 UNITS V V V A Drain Source Voltage . . . . ....