IRF9530, RF1S9530SM
Data Sheet July 1999 File Number
2221.4
12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
These are P-C...
IRF9530, RF1S9530SM
Data Sheet July 1999 File Number
2221.4
12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate power field effect
transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. The high input impedance allows these types to be operated directly from integrated circuits. Formerly developmental type TA17511.
Features
12A, 100V rDS(ON) = 0.300Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER IRF9530 RF1S9530SM PACKAGE TO-220AB TO-263AB BRAND IRF9530 RF1S9530
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S9530SM9A.
S
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE
JEDEC TO-263A
DRAIN (FLANGE)
4-9
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil....