Document
RF2044
4
Typical Applications • Broadband, Low-Noise Gain Blocks • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers • Final PA for Low-Power Applications • High Reliability Applications • Broadband Test Equipment
GENERAL PURPOSE AMPLIFIER
Product Description
The RF2044 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 Ω input and output impedances and requires only two external DC biasing elements to operate as specified. With a goal of enhanced reliability, the extremely small Micro-X ceramic package offers significantly lower thermal resistance than similar size plastic packages.
45° + 1°
4
0.055 + 0.005 0.020 + 0.002 0.040 + 0.002 0.070 sq.
NOTES: 1. Shaded lead is pin 1. 2. Darkened areas are metallization.
0.200 sq. Typ
Optimum Technology Matching® Applied
Si BJT Si Bi-CMOS
ü
Package Style: Micro-X Ceramic
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features • DC to >6000MHz Operation • Internally matched Input and Output • 20dB Small Signal Gain • 4.0dB Noise Figure
GND 4 MARKING - C4
• 50mW Linear Output Power • Single Positive Power Supply
RF IN 1
3 RF OUT
Ordering Information
2 GND
RF2044 RF204X PCBA General Purpose Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A9 010110
4-7
GENERAL PURPOSE AMPLIFIERS
RF2044
Absolute Maximum Ratings Parameter
Input RF Power Operating Ambient Temperature Storage Temperature
Rating
+13 -40 to +85 -60 to +150
Unit
dBm °C °C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Overall
Frequency Range 3dB Bandwidth Gain
Specification Min. Typ. Max.
DC to >6000 3 20.4 20.3 19.0 17.5 16.6 14.3 ±0.7 4.1 <1.4:1 <1.7:1 <1.2:1 <1.8:1 +33.5 +18.5 22.3 188 143
Unit
MHz GHz dB dB dB dB
Condition
T=25 °C, ICC =65mA
4
GENERAL PURPOSE AMPLIFIERS
19.3 16.5
21.3
Gain Flatness Noise Figure Input VSWR Output VSWR Output IP3 Output P1dB Reverse Isolation +30.0
dB dB
dBm dBm dB °C/W °C
Thermal
ThetaJC Maximum Measured Junction Temperature at DC Bias Conditions Mean Time Between Failures
Freq=100MHz Freq=850MHz Freq=2000MHz Freq=3000MHz Freq=4000MHz Freq=6000MHz 100MHz to 2000MHz Freq=1000MHz In a 50 Ω system, DC to 5000MHz In a 50 Ω system, 5000MHz to 6000MHz In a 50 Ω system, DC to 3000MHz In a 50 Ω system, 3000MHz .