RF2103P

RF2103P 2 Typical Applications Digital Communication Systems Portable Battery-Powered Equipment Spread-Spectrum Communication Systems Commercial and Consumer Systems Driver for Higher Power Linear Applications Base Station Equipment MEDIUM POWER LINEAR AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 450MHz and 1000MHz. It may also be used as a driver amplifier in higher power applications. The device is self-contained with the exception of the output matching network, power supply feed line, and bypass capacitors, and it produces an output power level of 750mW (CW). The device can be used in 3 cell battery applications. The maximum CW output at 3.6V is 175mW. The unit has a total gain of 31dB, depending upon the output matching network. 0.156 0.148 .018 .014 0.010 0.004 0.347 0.339 0.050 0.252 0.236 0.059 0.057 8° MAX 0° MIN 0.0500 0.0164 0.010 0.007 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: SOIC-14 GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features 450MHz to 1000MHz Operation Up to 750mW CW Output Power 31dB Small Signal Gain Single 2.7V to 7.5V Supply 47% Efficiency Digitally Controlled Power Down Mode RF IN 1 GND 2 GND 3 PD 4 VCC1 5 VCC2 6 PRE AM...