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RF2104 Dataheets PDF



Part Number RF2104
Manufacturers RF Micro Devices
Logo RF Micro Devices
Description MEDIUM POWER AMPLIFIER
Datasheet RF2104 DatasheetRF2104 Datasheet (PDF)

RF2104 2 Typical Applications • 900MHz ISM Band Applications • 400MHz Industrial Radios • Driver for Higher Power Applications • Portable Battery-Powered Equipment • Commercial and Consumer Systems • Base Station Equipment MEDIUM POWER AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2104 is a medium power amplifier IC. The device is manufactured on a low cost Silicon process, and has been designed for use as the final RF amplifier in UHF radio transmitters operating between 400MHz and 1.

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RF2104 2 Typical Applications • 900MHz ISM Band Applications • 400MHz Industrial Radios • Driver for Higher Power Applications • Portable Battery-Powered Equipment • Commercial and Consumer Systems • Base Station Equipment MEDIUM POWER AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2104 is a medium power amplifier IC. The device is manufactured on a low cost Silicon process, and has been designed for use as the final RF amplifier in UHF radio transmitters operating between 400MHz and 1000MHz. It may also be used as a driver amplifier in higher power applications. The device is packaged in a plastic quad-batwing 16-lead package, and is self-contained with the exception of the output matching network, power supply feed line, and bypass capacitors. It produces an output power level of up to 500mW (CW) at 3.6V. The device can be used in 3 cell battery applications. The maximum CW output at 3.6V is +27dBm. The unit has a total gain of 26dB, depending upon the output matching network. Optimum Technology Matching® Applied 0.020 REF 0.157 0.150 0.020 0.014 -A0.008 0.004 0.393 0.386 0.034 REF 0.068 0.064 0.244 0.229 8° MAX 0° MIN 0.034 0.009 0.016 0.007 0.068 0.053 ü Package Style: CJ2BAT0 Si BJT Si Bi-CMOS GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features • 400MHz to 1000MHz Operation • Up to 500mW CW Output Power • 26dB Small Signal Gain • 40dB Gain Control Range • Single 2.7V to 3.6V Supply • 40% Efficiency VCC1 1 GND 2 GND 3 VCC2 4 RF IN 5 GND 6 GND 7 PC 8 16 GND 15 GND 14 GND 13 RF OUT 12 RF OUT 11 GND 10 GND 9 GND BIAS Ordering Information RF2104 Medium Power Amplifier RF2104 PCBA-L Fully Assembled Evaluation Board (830MHz) RF2104 PCBA-H Fully Assembled Evaluation Board (915MHz) RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Functional Block Diagram Rev B4 010507 2-11 RF2104 Absolute Maximum Ratings Parameter Supply Voltage Gain Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR Operating Ambient Temperature Storage Temperature Rating -0.5 to +6.0 -0.5 to +3.0 500 +12 20:1 -40 to +85 -40 to +150 Unit VDC V mA dBm °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall Frequency Range Bandwidth Maximum Output Power Maximum Output Power Output Third Order Intercept Power Added Efficiency Small Signal Gain Gain Control Range Second Harmonic Third Harmonic Noise Figure Input Impedance Input Return Loss Input Return Loss Output Impedance Output Return Loss Load Impedance Specification Min. Typ. Max. Unit Condition T=25°C, VCC =3.6V, VPC =2.5V, ZLOAD =10 Ω, PIN =+6dBm, Freq=850MHz 24 400 to 1000 150 +27 +27 +36 40 25 35 -50 -50 5.5 50 -20 -10 50 -13 5+j0 2.7 to 3.6 250 1 4 0 <100 28 40 7.0 -15 MHz MHz dBm dBm dBm % dB dB dBc dBc dB Ω dB dB Ω dB Ω V mA µA mA mA µA ns With fixed matching network VCC =3.6V, PIN =+6dBm VCC =3.0V, PIN =+6dBm VCC =3.6V VCC =3.6V, POUT =+27dBm, PIN =+6dBm VCC =3.6V, VPC =+2.5V, Freq=850MHz VPC =0V to 2.5V Without external second harmonic trap With external matching network; see application schematic Without external matching network Not matched for maximum output power Without external matching network Load Impedance for Optimal Power Match Power Supply Power Supply Voltage Power Supply Idle Current Total "OFF" Current Drain Total "OFF" Current Drain Current into PC pin Current into PC pin Turn-on Time 300 10 1 VPC =2.5V VPC <0.25VDC; No RF input power VPC <0.25VDC; PIN =+6dBm VPC =2.5V VPC =0V VPC =0V to VPC =+2.5VDC 2-12 Rev B4 010507 RF2104 Pin 1 Function VCC1 Description Power supply for the bias circuits.This pin draws current proportional to VPC. When VPC is 2.5V the maximum current is about 30mA. When VPC goes down to 0V the current also goes down to 0mA. Interface Schematic VCC1 PC To Bias Stages 40 Ω 2 2 3 4 GND GND VCC2 Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. A via hole under each ground pin to the ground plane is recommended. Same as pin 2. Power supply for the driver stage and interstage matching. An external decoupling capacitor is required. The electrical length between the pin and this capacitor affects the gain. See the application schematic for recommended line length for optimum gain. For operation at frequencies below 600MHz a series inductor is required. 50 Ω RF input. DC voltages are present at this pin, and an external blocking capacitor is required when connecting this pin to a DC path to ground. For optimum impedance matching, a shunt inductor to ground is recommended; see the application schematic for details. Same as pin 2. Same as pin 2. Power co.


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