RF2162

www.DataSheet4U.com Preliminary 0 Typical Applications 3V CDMA/AMPS Cellular Handsets 3V J-CDMA/TACS Cellular Handsets 3V TDMA/AMPS Cellular Handsets Product Description The RF2162 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS hand-held digital cellular equipment, spread-spectrum systems, and other applications in the 800MHz to 960MHz band. The RF2162 has an analog bias control voltage to maximize efficiency. The device is self-contained with 50 Ω input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics. The device is packaged in a compact 4mmx4mm, 16-pin, leadless chip carrier. RF2162 3V 900MHz LINEAR AMPLIFIER Spread-Spectrum Systems CDPD Portable Data Cards Portable Battery-Powered Equipment 0.10 C B -B- 4.00 0.10 C B 2 PLCS 3.75 2 PLCS 2.00 0.80 TYP 2 A 1.60 2 PLCS 3.75 0.75 0.50 INDEX AREA Dimensions in mm. 1.50 SQ. 4.00 0.10 C A 2 PLCS 0.45 0.28 3.20 2 PLCS 2.00 0.10 C A 2 PLCS Shaded pin is lead 1. 12° MAX 0.05 0.00 0.10 M C A B 1.00 0.90 0.75 0.65 C 0.05 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 9 Package Style: QFN, 16-Pin, 4x4 GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Features Single 3V Supply 29dBm Linear ...