R2560A

Preliminary Data Sheet, Rev. 1 June 2001 R2560A High-Power 12 GHz Photodiode Description The R2560A incorporates a high-speed planar PIN diode to provide a highly reliable, high-power photodiode module. This module is well suited for receiver applications with optical preamplification. The diode is well matched over the operating frequency band, thereby simplifying high-speed integration. Block Diagram Features PIN PHOTODIODE s s s s s s s Highly reliable planar photodiode technology High power capability dc coupled High breakdown voltage Bandwidth >13 GHz typical Good RF match: >13 dB typical return loss Hermetically sealed PIN 3 +10 V BIAS 100 RF OUT 100 PIN 6 CASE GROUND 1-1176 (F) Applications Pin Information s Optically amplified systems (following EDFA or Raman amplifiers) Linear receiver applications FEC and Super-FEC to 12.5 Gbits/s Table 1. Pin Descriptions Pin No. 1 2 3 4 5 6 Description NC NC 10 V (VPD) NC NC Ground s s R2560A High-Power 12 GHz Photodiode Preliminary Data Sheet, Rev. 1 June 2001 Absolute Maximum Ratings Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Parameter Operating Temperature Range Storage Case Tem...