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BOOSTER AMPLIFIERS. PB58 Datasheet |
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MICROTECHNOLOGY
POWER BOOSTER AMPLIFIERS
PB58 • PB58A
HTTP://WWW.APEXMICROTECH.COM (800) 546-APEX (800) 546-2739
FEATURES
• WIDE SUPPLY RANGE — ±15V to ±150V
• HIGH OUTPUT CURRENT —
1.5A Continuous (PB58)
2.0A Continuous (PB58A)
• VOLTAGE AND CURRENT GAIN
• HIGH SLEW — 50V/µs Minimum (PB58)
75V/µs Minimum (PB58A)
• PROGRAMMABLE OUTPUT CURRENT LIMIT
• HIGH POWER BANDWIDTH — 320 kHz Minimum
• LOW QUIESCENT CURRENT — 12mA Typical
• EVALUATION KIT — See EK50
APPLICATIONS
• HIGH VOLTAGE INSTRUMENTATION
• Electrostatic TRANSDUCERS & DEFLECTION
• Programmable Power Supplies Up to 280V p-p
DESCRIPTION
The PB58 is a high voltage, high current amplifier designed
to provide voltage and current gain for a small signal, general
purpose op amp. Including the power booster within the feed-
back loop of the driver amplifier results in a composite amplifier
with the accuracy of the driver and the extended output voltage
range and current capability of the booster. The PB58 can also
be used without a driver in some applications, requiring only an
external current limit resistor to function properly.
The output stage utilizes complementary MOSFETs, provid-
ing symmetrical output impedance and eliminating second
breakdown limitations imposed by Bipolar Transistors. Internal
feedback and gainset resistors are provided for a pin-strapable
gain of 3. Additional gain can be achieved with a single external
resistor. Compensation is not required for most driver/gain
configurations, but can be accomplished with a single external
capacitor. Enormous flexibility is provided through the choice of
driver amplifier, current limit, supply voltage, voltage gain, and
compensation.
This hybrid circuit utilizes a beryllia (BeO) substrate, thick film
resistors, ceramic capacitors and semiconductor chips to maxi-
mize reliability, minimize size and give top performance.
Ultrasonically bonded aluminum wires provide reliable inter-
connections at all operating temperatures. The 8-pin TO-3
package is electrically isolated and hermetically sealed using
one-shot resistance welding. The use of compressible isolation
washers voids the warranty.
TYPICAL APPLICATION
CF
Figure 1. Inverting
composite amplifier.
VIN R I
RF
+15V
+Vs
OP
AMP
IN
COM PB58
–15V
–Vs
R CL
OUT
CC
RG
RL
EQUIVALENT SCHEMATIC
Q2
Q1
IN
4
GAIN 6.2K
7
50K
COM
5
COMP
8
Q4
3.1K
Q6
Q11
Q9 Q10
3
+Vs
Q3
Q5
Q7
OUT
1
2
CL
Q8
–Vs
6
EXTERNAL CONNECTIONS
+Vs
3
CL
2
IN 4
COM
5
TOP VIEW
R CL
OUT
1
COMP
8
CC
–Vs 6
7
GAIN
RG
APEX MICROTECHNOLOGY CORPORATION • TELEPHONE (520) 690-8600 • FAX (520) 888-3329 • ORDERS (520) 690-8601 • EMAIL prodlit@apexmicrotech.com
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PB58 • PB58A
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +VS to –VS
OUTPUT CURRENT, within SOA
POWER DISSIPATION, internal at TC = 25°C1
INPUT VOLTAGE, referred to COM
TEMPERATURE, pin solder—10 sec max
TEMPERATURE, junction1
TEMPERATURE, storage
OPERATING TEMPERATURE RANGE, case
300V
2.0A
83W
±15V
300°C
175°C
–65 to +150°C
–55 to +125°C
SPECIFICATIONS
PARAMETER
TEST CONDITIONS2
INPUT
OFFSET VOLTAGE, initial
OFFSET VOLTAGE, vs. temperature
INPUT IMPEDANCE, DC
INPUT CAPACITANCE
CLOSED LOOP GAIN RANGE
GAIN ACCURACY, internal Rg, Rf
GAIN ACCURACY, external Rf
PHASE SHIFT
OUTPUT
Full temperature range3
AV = 3
AV = 10
f = 10kHz, AVCL = 10, CC = 22pF
f = 200kHz, AVCL = 10, CC = 22pF
VOLTAGE SWING
VOLTAGE SWING
VOLTAGE SWING
CURRENT, continuous
SLEW RATE
CAPACITIVE LOAD
SETTLING TIME to .1%
POWER BANDWIDTH
SMALL SIGNAL BANDWIDTH
SMALL SIGNAL BANDWIDTH
POWER SUPPLY
Io = 1.5A (PB58), 2A (PB58A)
Io = 1A
Io = .1A
Full temperature range
Full temperature range
RL = 100Ω, 2V step
VC = 100 Vpp
CC = 22pF, AV = 25, Vcc = ±100
CC = 22pF, AV = 3, Vcc = ±30
VOLTAGE, ±VS4
CURRENT, quiescent
THERMAL
Full temperature range
VS = ±15
VS = ±60
VS = ±150
RESISTANCE, AC junction to case5
RESISTANCE, DC junction to case
RESISTANCE, junction to air
TEMPERATURE RANGE, case
Full temp. range, f > 60Hz
Full temp. range, f < 60Hz
Full temperature range
Meets full range specifications
PB58
PB58A
MIN TYP MAX MIN TYP MAX UNITS
±.75 ±1.75
–4.5 –7
25 50
*
3
3 10 25 *
±10 ±15
±15 ±25
10
60
* ±1.0 V
* * mV/°C
* kΩ
* pF
* * V/V
* *%
* *%
*°
*°
VS–11
VS–10
VS–8
1.5
50
160
VS –8
VS –7
VS –5
100
2200
2
320
100
1
VS–15
*
*
2.0
75
240
VS–11
*
*
*
*
*
*
*
*
V
V
V
A
V/µs
pF
µs
kHz
kHz
MHz
±156
±60 ±150
*
*
*
V
11 * mA
12 * mA
14 18
* * mA
1.2 1.3
* * °C/W
1.6 1.8
* * °C/W
30 * °C/W
–25 25 85 * * * °C
NOTES: *
1.
2.
3.
4.
5.
6.
The specification of PB58A is identical to the specification for PB58 in applicable column to the left.
Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation
to achieve high MTTF (Mean Time to Failure).
The power supply voltage specified under typical (TYP) applies, TC = 25°C unless otherwise noted.
Guaranteed by design but not tested.
+VS and –VS denote the positive and negative supply rail respectively.
Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.
+VS/–VS must be at least 15V above/below COM.
CAUTION
The PB58 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850°C to avoid generating toxic fumes.
APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739
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