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Voltage Transistors. PBF493RS Datasheet

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Voltage Transistors. PBF493RS Datasheet






PBF493RS Transistors. Datasheet pdf. Equivalent




PBF493RS Transistors. Datasheet pdf. Equivalent





Part

PBF493RS

Description

High Voltage Transistors

Manufacture

Motorola Inc

Datasheet
Download PBF493RS Datasheet


Motorola  Inc PBF493RS

PBF493RS; MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by PBF493RS/D High Voltage Transistors PNP Silicon COLLEC TOR 1 2 BASE 3 EMITTER PBF493RS MAXIM UM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emi tter – Base Voltage Collector Current — Continuous Total Device Dissipatio n @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 2.


Motorola  Inc PBF493RS

5°C Derate above 25°C Operating and St orage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –300 –300 –5.0 –500 625 5.0 1. 5 12 – 55 to +150 Unit Vdc Vdc Vdc mA dc mW mW/°C Watts mW/°C °C 1 2 3 C ASE 29–04, STYLE 17 TO–92 (TO–226 AA) THERMAL CHARACTERISTICS Characteri stic Thermal Resistance, Junction to Am bient Thermal Resistance, Junction to C.


Motorola  Inc PBF493RS

ase Symbol RqJA RqJC Max 200 83.3 Unit C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Cha racteristic Symbol Min Max Unit OFF CH ARACTERISTICS Collector – Emitter Bre akdown Voltage (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAd c, IC = 0) Collector Cutoff Curre.



Part

PBF493RS

Description

High Voltage Transistors

Manufacture

Motorola Inc

Datasheet
Download PBF493RS Datasheet




 PBF493RS
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High Voltage Transistors
PNP Silicon
Order this document
by PBF493RS/D
PBF493RS
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–300
–300
–5.0
–500
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –3.0 Vdc)
Collector Cutoff Current
(VCE = –10 Vdc)
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Symbol
Min
Max
Unit
V(BR)CEO –300
V(BR)CBO –300
V(BR)EBO –5.0
ICBO
IEBO
ICEO
–0.25
–20
–250
Vdc
Vdc
Vdc
µAdc
nAdc
nAdc
(Replaces PBF493R/D)
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1





 PBF493RS
PBF493RS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –30 mAdc, VCE = –10 Vdc)
Collector – Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
Base – Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
PBF493RS
All Types
All Types
hFE
VCE(sat)
VBE(sat)
40
40
25
–0.5 Vdc
–0.9 Vdc
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz)
Output Capacitance
(VCB = –20 Vdc, IE = 0, f = 1.0 MHz)
fT 50 — MHz
Cobo — 6.0 pF
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data





 PBF493RS
200
VCE = 10 Vdc
TJ = +125°C
100
50
30
20
1.0
25°C
–55°C
2.0 3.0
5.0 7.0
10
20
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
30
PBF493RS
50 70
100
100
50
20 Ceb
10
5.0
2.0
1.0
0.2
Ccb
0.5 1.0 2.0 5.0 10 20 50 100 200
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitances
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
50 70 100
100
70
50
TJ = 25°C
30
VCE = 20 V
f = 20 MHz
20
10
1.0 2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 3. Current–Gain — Bandwidth Product
500
200 TA = 25°C
100 µs
10 µs
1.0 ms
100 TC = 25°C
50
100 ms
20
10
5.0
2.0
1.0
0.5
0.5
CURRENT LIMIT
THERMAL LIMIT
(PULSE CURVES @ TC = 25°C)
SECOND BREAKDOWN LIMIT
CURVES APPLY
BELOW RATED VCEO
PBF493RS
1.0 2.0 5.0 10 20 50 100 200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
500
Figure 5. Maximum Forward Bias
Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3



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