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RA07N4047M-01

Mitsubishi Electric Semiconductor

MITSUBISHI RF MOSFET MODULE

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECA UTIONS RA07N4047M 400-470MHz 7.5W 9.6...


Mitsubishi Electric Semiconductor

RA07N4047M-01

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MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECA UTIONS RA07N4047M 400-470MHz 7.5W 9.6V PORTABLE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=9.6V, VGG=0V) Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW ηT>43% @ Pout=7W (V GG control), VDD=9.6V, Pin=20mW Broadband Frequency Range: 400-470MHz Low-Power Control Current IGG=1mA (typ) at VGG=3.5V Module Size: 30 x 10 x 5.4 mm Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5...




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